RJF0606JPE_13 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – 60V-40A Silicon N Channel Thermal FET Power Switching

RJF0606JPE
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
16
14
12
10
8
24 V ^VDD ^{= 16 V}
6
4
2
0
10
100
1000
10000
Shutdown Time of Load-Short Test Pw (μS)
Target Specifications
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120
I_D = 5 A
100
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 _0.1
0.05
0.03
0.02
0.01
1shot
pulse
0.01
10 μ
100 μ
θch – c (t) = γ s (t) • θch – c
θch – c = 2.5°C/W, Tc = 25°C
P_DM
D = ^PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
R07DS0580EJ0300 Rev.3.00
May 15, 2013
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