RJF0606JPE_13 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – 60V-40A Silicon N Channel Thermal FET Power Switching

RJF0606JPE
Static Drain to Source on State Resistance
vs. Temperature
35
Pulse Test
30
25
I_D = 20 A
10 A
5A
20
V_GS = 4 V
15
20 A
I_D = 5, 10 A
10
10 V
5
–50 –25 0
25 50 75 100 125 150
Case Temperature Tc (°C)
1000
Body-Drain Diode Reverse
Recovery Time
100
10
0.1
di / dt = 50 A / μs
V_GS = 0, Ta = 25°C
1
10
100
Reverse Drain Current I_DR (A)
Reverse Drain Current vs.
Source to Drain Voltage
40
Pulse Test
30
20
0V
V_GS = 5 V
10
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Target Specifications
Forward Transfer Admittance vs.
Drain Current
100
V_DS = 10 V
Pulse Test
Tc = –40°C
25°C
10
150°C
1
0.1
0.1
1
10
100
Drain Current I_D (A)
Switching Characteristics
100
tr
tf
10
td(off)
td(on)
V_GS = 10 V, V_DD = 30 V
PW = 300 μs, duty ≤ 1 %
1
0.1
1
10
100
Drain Current I_D (A)
10000
3000
1000
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
300
100
Coss
30
10
0 10 20 30 40 50 60
Drain to Source Voltage V_DS (V)
R07DS0580EJ0300 Rev.3.00
May 15, 2013
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