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RJE0616JSP Datasheet, PDF (5/8 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching | |||
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RJE0616JSP
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120
ID = â0.5 A
dv / dt
VGS ⥠500 V/ ms
100
0
â2
â4 â6 â8 â10
Gate to Source Voltage VGS (V)
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
10
1 D=1
0.5
0.2
0.1 0.1
0.05
0.02
0.01 0.01
1shot pulse
0.001
100 μ 1 m
θch â f(t) = γs (t) ⢠θch â f
θch â f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 Ã 40 Ã 1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Vin
â10 V
Avalanche Test Circuit
VDS
Monitor
Rg
50 Ω
L
IAP
Monitor
D.U.T
VDD
Avalanche Waveform
EAR =
1
2
⢠L ⢠IAP2 â¢
VDSS
VDSS â VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
REJ03G1944-0100 Rev.1.00
Jul 01, 2010
Page 5 of 7
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