RJE0616JSP Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

RJE0616JSP
Preliminary
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes; 4. Pulse test
Symbol
V_IH
V_IL
I_IH1
I_IH2
I_IL
I_IH(sd)1
I_IH(sd)2
Tsd
Min
–3.5
—
—
—
—
—
—
—
Vop
I_{D limt}
–3.5
–4
Typ
—
—
—
—
—
–0.8
–0.35
175
Max
—
–1.2
–100
–50
–1
—
—
—
—
–12
—
—
Unit
V
V
A
A
A
mA
mA
C
V
A
(Ta = 25°C)
Test Conditions
Vi = –8 V, V_DS = 0
Vi = –3.5 V, V_DS = 0
Vi = –1.2 V, V_DS = 0
Vi = –8 V, V_DS = 0
Vi = –3.5 V, V_DS = 0
Channel temperature
(dv/dt V_GS  500 V/ms)
V_GS = –12 V, V_DS = –10 V ^{Note 4}
Electrical Characteristics
Item
Symbol Min
Drain current
I_D1
—
I_D2
—
I_D3
–4
Drain to source breakdown
voltage
V_(BR)DSS
–60
Gate to source breakdown
voltage
V_(BR)GSS
V_(BR)GSS
–16
2.5
Gate to source leak current
I_GSS1
—
I_GSS2
—
I_GSS3
—
I_GSS4
—
Input current (shut down)
I_GS(OP)1
—
I_GS(OP)2
—
Zero gate voltage drain current
I_DSS1
—
Zero gate voltage drain current
I_DSS2
—
Typ
—
—
—
—
—
—
—
—
—
—
–0.8
–0.35
—
—
Max
–4
–10
—
—
—
—
–100
–50
–1
100
—
—
–10
–10
Unit
A
mA
A
V
V
V
A
A
A
A
mA
mA
A
A
Gate to source cutoff voltage
V_GS(off)
–2.2
—
–3.4
V
Static drain to source on state
R_DS(on)
—
102
150
m
resistance
R_DS(on)
—
77
90
m
Output capacitance
Coss
—
290
—
pF
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward
voltage
t_d(on)
—
3.20
—
s
t_r
—
2.80
—
s
t_d(off)
—
1.55
—
s
t_f
—
1.05
—
s
V_DF
—
–0.84
—
V
Body-drain diode reverse
recovery time
t_rr
—
84
—
ns
Over load shut down
operation time ^{Note 6}
t_os1
—
6.34
—
ms
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
(Ta = 25°C)
Test Conditions
V_GS = –3.5 V, V_DS = –10 V
V_GS = –1.2 V, V_DS = –10 V
V_GS = –12 V, V_DS = –10 V ^{Note 5}
I_D = –10 mA, V_GS = 0
I_G = –800 A, V_DS = 0
I_G = 100 A, V_DS = 0
V_GS = –8 V, V_DS = 0
V_GS = –3.5 V, V_DS = 0
V_GS = –1.2 V, V_DS = 0
V_GS = 2.4 V, V_DS = 0
V_GS = –8 V, V_DS = 0
V_GS = –3.5 V, V_DS = 0
V_DS = –60 V, V_GS = 0
V_DS = –48 V, V_GS = 0,
Ta = 125C
V_DS = –10 V, I_D = –1 mA
I_D = –2 A, V_GS = –6 V ^{Note 5}
I_D = –2 A, V_GS = –10 V ^{Note 5}
V_DS = –10 V, V_GS = 0, f = 1MHz
V_GS = –10 V, I_D= –2 A,
R_L = 15 
I_F = –4 A, V_GS = 0
I_F = –4 A, V_GS = 0
di_F/dt = 50 A/s
V_GS = –5 V, V_DD = –16 V
REJ03G1944-0100 Rev.1.00
Jul 01, 2010
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