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R1LP5256E Datasheet, PDF (5/15 Pages) Renesas Technology Corp – 256Kb Advanced LPSRAM (32k word x 8bit)
R1LP5256E Series
DC Operating Conditions
Parameter
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
Vcc
4.5
5.0
5.5
V
Vss
0
0
0
V
Input high voltage
VIH
2.2
-
Vcc+0.3
V
Input low voltage
VIL
-0.3
-
0.8
V
R Ver.
0
-
+70
°C
Ambient temperature range
Ta
I Ver.
-40
-
+85
°C
Note 1. –3.0V for pulse ≤ 30ns (full width at half maximum)
2. Ambient temperature range depends on R/I-version. Please see table on page 1.
Note
1
2
2
DC Characteristics
Parameter
Input leakage current
Output leakage current
Average operating current
Standby current
Standby current
Symbol
| ILI |
| ILO |
ICC1
ICC2
ISB
Min. Typ. Max. Unit
Test conditions
-
-
1
μA Vin = Vss to Vcc
-
-
1
μA CS# =VIH or OE# =VIH,
VI/O =Vss to Vcc
Min. cycle, duty =100%, II/O = 0mA
-
25
35 mA
CS# =VIL, Others = VIH/VIL
Cycle =1μs, duty =100%, II/O = 0mA
-
2
4 mA CS# ≤ 0.2V,
VIH ≥ Vcc-0.2V, VIL ≤ 0.2V
-
-
3
mA CS# =VIH,
Others = Vss to Vcc
-
1*1
Vin = Vss to Vcc
2
μA ~+25°C
-
-
3
μA ~+40°C CS# ≥ Vcc-0.2V
ISB1
-
-
8
μA ~+70°C
-
-
10 μA ~+85°C
Output high voltage
VOH
2.4
-
-
V IOH = -1mA
VOH2
Vcc
-
- 0.5
-
V IOH = -0.1mA
Output low voltage
VOL
-
-
0.4
V IOL = 2mA
Note 1. Typical parameter indicates the value for the center of distribution at 5.0V (Ta= 25ºC), and not 100% tested.
R10DS0070EJ0100 Rev.1.00
2011.04.13
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