R1LP0108E_17 Datasheet, PDF (5/13 Pages) Renesas Technology Corp – 1Mb Advanced LPSRAM

R1LP0108E Series
DC Operating Conditions
Parameter
Symbol
Min.
Supply voltage
Vcc
4.5
Vss
0
Input high voltage
VIH
2.2
Input low voltage
VIL
-0.3
Ambient temperature range
Ta
-40
Note 1. –3.0V for pulse ≤ 30ns (full width at half maximum)
Typ.
Max.
Unit
5.0
5.5
V
0
0
V
-
Vcc+0.3
V
-
0.8
V
-
+85
°C
Note
1
DC Characteristics
Parameter
Input leakage current
Output leakage current
Average operating current
Symbol
| ILI |
| ILO |
ICC1
ICC2
Standby current
ISB
Standby current
Min. Typ. Max. Unit
Test conditions
-
-
1
A Vin = Vss to Vcc
CS1# =VIH or CS2 =VIL or
-
-
1
A OE# =VIH,
VI/O =Vss to Vcc
-
25
35
mA
Min. cycle, duty =100%, II/O = 0mA,
CS1# =VIL, CS2 =VIH, Others = VIH/VIL
Cycle =1s, duty =100%, II/O = 0mA,
-
2
5
mA CS1# ≤ 0.2V, CS2 ≥ Vcc-0.2V,
VIH ≥ Vcc-0.2V, VIL ≤ 0.2V
“CS2 =VIL” or
-
-
3
mA “CS2 = VIH and CS1# =VIH”,
Others = Vss to Vcc
Vin = Vss to Vcc,
-
0.6^*1
2
A ~+25°C
-
-
3
A ~+40°C _{(1) CS2 ≤ 0.2V or}
ISB1
(2) CS1# ≥ Vcc-0.2V,
-
-
8
A ~+70°C
CS2 ≥ Vcc-0.2V
-
-
10 A ~+85°C
Output high voltage
VOH
2.4
-
-
V IOH = -1mA
VOH2
Vcc
- 0.5
-
-
V IOH = -0.1mA
Output low voltage
VOL
-
-
0.4
V IOL = 2mA
Note 1. Typical parameter indicates the value for the center of distribution at 5.0V (Ta= 25ºC), and not 100% tested.
Capacitance
(Vcc = 4.5V ~ 5.5V, f = 1MHz, Ta = -40 ~ +85°C)
Parameter
Symbol Min. Typ. Max. Unit Test conditions
Note
Input capacitance
C in
-
-
8
pF
Vin =0V
1
Input / output capacitance
C I/O
-
-
10
pF
VI/O =0V
1
Note 1. This parameter is sampled and not 100% tested.
R10DS0270EJ0100 Rev.1.00
2017.1.27
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