PF08134B Datasheet, PDF (5/14 Pages) Renesas Technology Corp – MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone

PF08134B
Electrical Characteristics for DCS1900 band
(Tc = 25°C)
Test conditions unless otherwise noted:
f = 1850 to 1910 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 0 V, Rg = Rl = 50 Ω, Tc = 25°C,
Pulse operation with pulse width 1154 µs and duty cycle 2:8 shall be used.
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Frequency range
f
1850
—
1910
MHz
Band select (DCS active) Vctl
0
—
0.1
V
Input power
Pin
–2
—
2
dBm
Control voltage range
Vapc
0.2
—
2.2
V
Supply voltage
Vdd
3.1
3.5
4.5
V
Total efficiency
2nd harmonic distortion
ηT
2nd H.D.
40
47
—
%
Pout DCS = 32.0 dBm,
—
–15
–3
dBm
Vapc controlled
3rd harmonic distortion
3rd H.D.
—
–8
–3
dBm
4th~8th harmonic distortion 4th~8th H.D.
—
—
–3
dBm
Input VSWR
VSWR (in)
—
1.5
3
—
Output power (1)
Pout (1)
32.0
33.0
—
dBm
Vapc = 2.2 V
Output power (2)
Pout (2)
30.5
31.5
—
dBm
Vdd = 3.1 V, Vapc = 2.2 V, Tc = +85°C
Idd at Low power
—
Isolation
—
—
—
150
mA
Pout DCS = 5 dBm
—
–42
–37
dBm
Vapc = 0.2 V
Switching time
Stability
tr, tf
—
1
2
µs
Pout DCS = 0 to 32.0 dBm
—
No parasitic oscillation
—
Vdd = 3.1 to 4.5 V, Pout DCS ≤ 32.0 dBm,
< –36 dBm
Vapc DCS ≤ 2.2 V, Rg = 50 Ω,
Output VSWR = 6 : 1 All phase angles
Load VSWR tolerance
—
No degradation
or
Permanent degradation
—
Vdd = 3.1 to 4.5 V, Pout DCS ≤ 32.0 dBm,
Vapc DCS ≤ 2.2 V, Rg = 50 Ω, t = 20 sec.,
Output VSWR = 10 : 1 All phase angles
Load VSWR tolerance
—
at GPRS CLASS 12
operation
No degradation
or
Permanent degradation
—
Vdd = 3.1 to 4.2 V, Pout DCS ≤ 32.0 dBm,
Vapc DCS ≤ 2.2 V, Rg = 50 Ω, t = 20 sec.,
Tc ≤ 90°C,
Output VSWR = 10 : 1 All phase angles
Slope Pout/Vapc
—
AM output
—
—
160
200
dB/V
Pout DCS = 0 to 32.0 dBm
—
15
20
%
Pout DCS = 0 to 32.0 dBm,
4% AM modulation at input
50 kHz modulation frequency
Rev.1.01, May 13, 2004, page 5 of 13