PF08134B Datasheet, PDF (1/14 Pages) Renesas Technology Corp – MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone

PF08134B
MOS FET Power Amplifier Module
for GSM850 and DCS1800/1900 Triple Band Handy Phone
REJ03G0075-0101Z
Rev.1.01
May 13, 2004
Application
• Triple band amplifier for
GSM850 (824 MHz to 849 MHz) and DCS1800/1900 (1710 MHz to 1785 MHz, 1850 MHz to 1910 MHz).
• For 3.5 V & GPRS Class12 operation compatible
Features
• All in one including output matching circuit
• Simple external circuit
• Simple power control
• High gain 3stage amplifier : 0 dBm input Typ
• Lead less thin & Small package : 8.0 × 10.0 × 1.5 mm Max
• High efficiency
 47% Typ at 33.5 dBm for GSM850
 47% Typ at 32.5 dBm for DCS1800
 47% Typ at 32.0 dBm for DCS1900
Pin Arrangement
• RF-Q-8
8 ^{7G6 5}
1 ^{2G3 4}
1: Pin _GSM
2: Vapc
3: Vdd1
4: Pout _GSM
5: Pout _DCS & Pout _PCS
6: Vdd2
7: Vctl
8: Pin _DCS & Pin _PCS
G: GND
Rev.1.01, May 13, 2004, page 1 of 13