NP90N03VLG Datasheet, PDF (5/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP90N03VLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
6
I_D = 45 A
5 ^Pulsed
V_GS = 4.5 V
4
10 V
3
2
1
0
-75 -25 25
75 125 175
T_ch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
100
t_d(off)
V_DD = 15 V
V_GS = 10 V
R_G = 0 Ω
t_f
t_d(on)
10 _tr
1
0.1
1
10
100
I_D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
V_GS = 10 V
0V
10
1
0.1
0.01
0.001
Pulsed
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_F(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
V_GS = 0 V
f = 1 MHz
10000
C_iss
1000
C_oss
C_rss
100
0.01
0.1
1
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
10
40
V_DD = 24 V
15 V
30
6V
8
V _GS
6
20
4
10
0
0
V _DS
20
40
60
2
I_D = 90 A ₀
80 100
Q_G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
0.1
di/dt = 100 A/μs
V_GS = 0 V
1
10
100
I_F - Drain Current - A
R07DS0129EJ0100 Rev.1.00
Sep 24, 2010
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