NP90N03VLG Datasheet, PDF (4/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP90N03VLG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
Pulsed
V_GS = 10 V
300
4.5 V
200
100
0
0
0.5
1
1.5
2
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
3
V_DS = V_GS
2
I_D = 10 mA
1 mA
1
250 μA
0
-75 -25 25 75 125 175
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
6
Pulsed
5
4
V_GS = 4.5
3
2
10 V
1
0
1
10
100
1000
I_D - Drain Current - A
R07DS0129EJ0100 Rev.1.00
Sep 24, 2010
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
1
0.1
T_ch = -55°C
-25°C
25°C
75°C
125°C
150°C
175°C
0.01
0.001
0.0001
0
1
2
V_DS = 10 V
Pulsed
3
4
5
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
100
T_ch = -55°C
-25°C
25°C
10
75°C
125°C
150°C
175°C
1
0.1
V_DS = 5 V
Pulsed
1
10
100
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
6
5
4
3
2
1
I_D = 45 A
Pulsed
0
0
10
20
V_GS - Gate to Source Voltage - V
Page 4 of 6