NP75P03YDG Datasheet, PDF (5/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP75P03YDG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
15
ID = −37.5 A
Pulsed
12
9
VGS = −5 V
6
−10 V
3
0
-100
0
100
200
T_ch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
td(off)
tf
td(on)
10
tr
1
-0.1
-1
VDD = −15 V
VGS = −10 V
RG = 0 Ω
-10
-100
I_D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
-1000
-100
VGS = −10 V
0V
-10
-1
Pulsed
-0.1
0
0.5
1
1.5
V_F(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
Coss
Crss
100
VGS = 0 V
f = 1 MHz
10
-0.1
-1
-10
-100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-30
-12
-25
VDD = −24 V
-20
−15 V
−6 V
-15
-10
VGS
-8
-6
-10
-4
-5
-0
0
VDS
-2
ID = −75 A
-0
20
40
60
80 100
Q_G - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
-0.1
di/dt = −100 A/μs
VGS = 0 V
-1
-10
-100
I_F - Drain Current - A
R07DS0020EJ0200 Rev.2.00
Mar 16, 2011
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