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NP75P03YDG Datasheet, PDF (2/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR | |||
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NP75P03YDG
Chapter Title
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance â1
Drain to Source On-state
Resistance â1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage â1
Reverse Recovery Time
Reverse Recovery Charge
Note: â1. Pulsed
Symbol
IDSS
IGSS
VGS(th)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
Min
â1.0
30
Typ
â1.6
60
4.8
6.2
3200
660
390
13
13
270
180
94
18
29
1.0
62
65
Max
â1
m100
â2.5
6.2
9.6
4800
990
700
26
32
540
440
141
1.5
Unit
μA
nA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
VDS = â30 V, VGS = 0 V
VGS = m20 V, VDS = 0 V
VDS = VGS, ID = â250 μ A
VDS = â5 V, ID = â37.5 A
VGS = â10 V, ID = â37.5 A
VGS = â5 V, ID = â37.5 A
VDS = â25 V,
VGS = 0 V,
f = 1 MHz
VDD = â15 V, ID = â37.5 A,
VGS = â10 V,
RG = 0 Ω
VDD = â24 V,
VGS = â10 V,
ID = â75 A
IF = â75 A, VGS = 0 V
IF = â75 A, VGS = 0 V,
di/dt = 100 A/μ s
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = â20 â 0 V
IAS
ID
VDD
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG.
RG
VGS(â)
0
Ï
Ï = 1 μs
Duty Cycle ⤠1%
RL
VDD
VGS(â)
VGS
Wave Form
10%
0
VDS(â)
90%
VDS
VDS
0
Wave Form
td(on)
VGS
90%
90%
10% 10%
tr td(off)
tf
ton
toff
D.U.T.
IG = â2 mA
RL
PG.
50 Ω
VDD
R07DS0020EJ0200 Rev.2.00
Mar 16, 2011
Page 2 of 6
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