NP60N04PDK_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – 40 V – 60 A – N-channel Power MOS FET Application: Automotive

NP60N04PDK
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
8
V_GS = 4.5 V
6
I_D = 15 A
4
2
0
–100 –50 0
V_GS = 10 V
I_D = 30 A
Pulsed
50 100 150 200
T_ch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
td(off)
V_DD = 20 V
V_GS = 10 V
R_G = 0 Ω
td(on)
10
tr
1
0.1
1
tf
10
100
I_D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
V_GS = 10 V
100
V_GS = 4.5 V
10
V_GS = 0 V
1
0.1
0
Pulsed
0.2 0.4 0.6 0.8 1.0 1.2
V_F(S-D) - Source to Drain Voltage - V
Preliminary
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
V_GS = 0 V
f = 1 MHz
100
0.1
1
Coss
Crss
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35
14
30
V_DD = 32 V
12
20 V
25
8V
10
20
8
15
6
10
V_GS
4
V_DS
5
2
I_D = 60 A
0
0
0 5 10 15 20 25 30 35 40 45
Q_G- Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
di/dt = 100 A/μs
V_GS = 0 V
1
0.1
1
10
100
I_F - Drain Current - A
R07DS1013EJ0100 Rev.1.00
Feb 21, 2013
Page 5 of 6