NP60N04PDK_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – 40 V – 60 A – N-channel Power MOS FET Application: Automotive

NP60N04PDK
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
350
300
V_GS = 10 V
250
200
150
V_GS = 4.5 V
100
50
Pulsed
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3
2
1
0
–100 –50 0
V_DS = V_GS
I_D = 250 μA
50 100 150 200
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
8
6
V_GS = 4.5 V
4
2
V_GS = 10 V
0
0.1
1
10
Pulsed
100
1000
I_D - Drain Current - A
Preliminary
FORWARD TRANSFER CHARACTERISTICS
100
10
T_A = –55°C
25°C
75°C
150°C
1
175°C
0.1
0.01
0.001
0
V_DS = 10 V
Pulsed
1
2
3
4
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
T_A = –55°C
25°C
75°C
150°C
175°C
10
V_DS = 5 V
Pulsed
1
0.1
1
10
100
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
8
6
4
2
I_D = 30 A
Pulsed
0
0
5
10
15
20
V_GS - Gate to Source Voltage - V
R07DS1013EJ0100 Rev.1.00
Feb 21, 2013
Page 4 of 6