NP55N04SLG_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP55N04SLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
12.0
11.0
10.0
9.0
8.0
5.0 V
VGS = 4.5 V
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-75 -25
25
75
10 V
ID = 28 A
Pulsed
125 175
T_ch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
VDD = 20 V
tr
VGS = 10 V
RG = 0 Ω
td(off)
td(on)
10
tf
1
0.01
0.1
1
10
100
I_D - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
100
VGS = 10 V
10
4.5 V
5.0 V
0V
1
0.1
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
Pulsed
1
1.2
1.4
V_F(S-D) - Source to Drain Voltage - V
R07DS0242EJ0100 Rev.1.00
Feb 23, 2011
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10.00
Ciss
1.00
Coss
VGS = 0 V
f = 1 MHz
Crss
0.10
0.01
0.1
1
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35
VDS
30
25
20
15
10
5
0
0 10
15
VDD = 32 V
20 V
10
8V
5
ID = 55 A
Pulsed
0
20 30 40 50 60 70
Q_G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
0.1
VGS = 0 V
di/dt = 100 A/μs
1
10
100
I_F - Diode Forward Current - A
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