NP55N04SLG_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP55N04SLG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
250
VGS = 10 V
200
150
5.0 V ^{4.5 V}
100
50
Pulsed
0
012345678
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
2
1.8
1.6
1.4
1.2
1
0.8
0.6
Pulsed
0.4
VDS = VGS
0.2
ID = 250 μA
0
-75 -25
25
75 125 175
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
Pulsed
35
30
25
20
15
10
5
0
1
4.5 V
5.0 V
10
VGS = 10 V
100
1000
I_D - Drain Current - A
R07DS0242EJ0100 Rev.1.00
Feb 23, 2011
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
100
10
1
0.1
0.01
0.001
VDS = 10 V
Pulsed
100°C
125°C
150°C
175°C
0.0001
0 0.5 1 1.5
TA = −55°C
−25°C
25°C
75°C
2 2.5 3 3.5 4
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = −55°C
10
−25°C
1
25°C
0.1
75°C
0.01
0.001
0.0001
0.0001
125°C
150°C
175°C
0.001 0.01
0.1
100°C
VDS = 10 V
1
10
100
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
28 A
35
30
25
ID = 55 A
20
15
10
5
11 A
0
0
5
10
15
Pulsed
20
25
V_GS - Gate to Source Voltage - V
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