HRD0203C Datasheet, PDF (5/8 Pages) Renesas Technology Corp – SILICON SCHOTTKY BARRIER DIODE FOR RECTIFYING

Main Characteristic
HRD0203C
1.0
10^–1
Pulse test
10^–2
10^–3
10^–4
Ta = 75°C
Ta = 25°C
Ta = –25°C
10^–5
10^–6
0
0.2 0.4 0.6 0.8 1.0
Forward voltage V_F (V)
Fig.1 Forward current vs. Forward voltage
0.30
0.25
0.20
0A t
T
Tj = 25°C
D = —t
T
0.15
0.10
0.05
D=1/6
D=1/3
sin(θ=180˚)
D=1/2
DC
10^–3
Ta = 75°C
10^–4
10^{–5 Ta = 25°C}
Pulse test
10^–6
Ta = –25°C
10^–7
10^–8
0
10 20 30 40 50
Reverse voltage V_R (V)
Fig.2 Reverse current vs. Reverse voltage
0.6
0V
0.5
t
T
D = —t
T
Tj = 125°C
0.4
0.3
0.2
D=5/6
D=2/3
D=1/2
sin(θ=180˚)
0.1
0
0 0.05 0.10 0.15 0.20 0.25
Forward current I_F (A)
Fig3. Forward power dissipation vs. Forward current
0
0
10
20
30
40
Reverse voltage V_R (V)
Fig4. Reverse power dissipation vs. Reverse voltage
Rev.0, Nov. 2002, page 3 of 6