HRD0203C Datasheet, PDF (4/8 Pages) Renesas Technology Corp – SILICON SCHOTTKY BARRIER DIODE FOR RECTIFYING

HRD0203C
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Repetitive peak reverse voltage
Average rectified current
Non-Repetitive peak forward surge current
Junction temperature
V *1
RRM
I *1
O
I_FSM *²
Tj
Storage temperature
Tstg
Notes: 1. See from Fig.3 to Fig.5, with polyimide board.
2. 10 ms sine wave 1 pulse.
Value
Unit
30
V
200
mA
2
A
125
°C
–55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Condition
Forward voltage
V_F1
—
V_F2
—
Reverse current
I_R
—
Thermal resistance Rth(j-a) —
—
0.25
V
I_F = 5 mA
—
0.45
I_F = 200 mA
—
30
µA
V_R = 10 V
600
—
°C/W
Polyimide board *¹
Note: 1. Polyimide board
20h×15w×0.8t
1.5
Unit: mm
1.5
Rev.0, Nov. 2002, page 2 of 6