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HN58X2432SI_05 Datasheet, PDF (5/22 Pages) Renesas Technology Corp – Two-wire serial interface 32k EEPROM (4-kword × 8-bit)/64k EEPROM (8-kword × 8-bit)
HN58X2432SI/HN58X2464SI
AC Characteristics (Ta = −40 to +85°C, VCC = 1.8 to 5.5 V)
Test Conditions
• Input pules levels:
 VIL = 0.2 × VCC
 VIH = 0.8 × VCC
• Input rise and fall time: ≤ 20 ns
• Input and output timing reference levels: 0.5 × VCC
• Output load: TTL Gate + 100 pF
Parameter
Symbol Min
Typ
Max
Unit
Clock frequency
fSCL


400
kHz
Clock pulse width low
tLOW
1200 

ns
Clock pulse width high
tHIGH
600


ns
Noise suppression time
tI


50
ns
Access time
tAA
100

900
ns
Bus free time for next mode
tBUF
1200 

ns
Start hold time
tHD.STA
600


ns
Start setup time
tSU.STA
600


ns
Data in hold time
VCC = 3.0 V to 5.5 V tHD.DAT 10


ns
VCC = 1.8 V to 3.0 V tHD.DAT 20


ns
Data in setup time
tSU.DAT
100


ns
Input rise time
tR


300
ns
Input fall time
tF


300
ns
Stop setup time
tSU.STO
600


ns
Data out hold time
tDH
50


ns
Write protect hold time
tHD.WP
1200


ns
Write protect setup time
tSU.WP
0


ns
Write cycle time
VCC = 2.7 V to 5.5 V tWC


10
ms
VCC = 1.8 V to 2.7 V tWC


15
ms
Notes: 1. This parameter is sampled and not 100% tested.
2. tWC is the time from a stop condition to the end of internally controlled write cycle.
Notes
1
1
1
2
2
Rev.2.00, Jan.11.2005, page 5 of 20