HAT2279H_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2279H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
3.1 V
10 V
40
2.9 V
30
20
2.7 V
10
V_GS = 2.5 V
Pulse Test
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
Pulse Test
160
120
I_D = 10 A
80
5A
40
2A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.2.00 Jul 05, 2006 page 3 of 7
Maximum Safe Operation Area
1000
100
10
1
Operation in
this area is
10 µs
DC _Op^P_er^W_atio=_n1T10cm=m^s12_s⁰⁵⁰_°C^µs
0.1 ^{limited by R}DS(on)
Ta = 25°C
1 shot Pulse
0.01
0.01 0.1
1
10
100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20
Tc = 75°C
10
25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
V_GS = 4.5 V
10
10 V
Pulse Test
1
1
10
100
1000
Drain Current I_D (A)