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HAT2279H_15 Datasheet, PDF (4/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching | |||
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HAT2279H
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 80
Gate to source leak current
IGSS
â
Zero gate voltage drain current
IDSS
â
Gate to source cutoff voltage
VGS(off)
0.8
Static drain to source on state
resistance
RDS(on)
â
RDS(on)
â
Forward transfer admittance
|yfs|
42
Input capacitance
Ciss
â
Output capacitance
Coss
â
Reverse transfer capacitance
Crss
â
Gate Resistance
Rg
â
Total gate charge
Qg
â
Gate to source charge
Qgs
â
Gate to drain charge
Qgd
â
Turn-on delay time
td(on)
â
Rise time
tr
â
Turn-off delay time
td(off)
â
Fall time
tf
â
Bodyâdrain diode forward voltage
VDF
â
Bodyâdrain diode reverse recovery
trr
â
time
Notes: 4. Pulse test
Typ
â
â
â
â
9.5
11
70
3520
410
160
0.5
60
9.5
9.0
9.5
14.5
56
9.5
0.83
50
Max
â
±0.5
1
2.3
12
15
â
â
â
â
â
â
â
â
â
â
â
â
1.08
â
Unit
V
µA
µA
V
mâ¦
mâ¦
S
pF
pF
pF
â¦
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 80 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 15 A, VGS = 10 V Note4
ID = 15 A, VGS = 4.5 V Note4
ID = 15 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
VDD = 25 V, VGS = 10 V,
ID = 30 A
VGS = 10 V, ID = 15 A,
VDD â
30 V, RL = 2 â¦,
Rg = 4.7 â¦
IF = 30 A, VGS = 0 Note4
IF = 30 A, VGS = 0
diF/ dt = 100 A/ µs
Rev.2.00 Jul 05, 2006 page 2 of 7
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