HAT2268C_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2268C
Main Characteristics
Power vs. Temperature Derating
1.6
Test Condition :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm), Ta = 25°C
1.2
0.8
0.4
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
20
10 V
5.0 V
16
4.3 V
12
4.0 V
3.7 V
3.5 V
3.3 V
8
3.0 V
4
V_GS = 2.7 V
Pulse Test
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
400
Pulse Test
300
200
100
I_D = 1 A
4A
2A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Rev.2.00 Feb 28, 2006 page 3 of 6
Maximum Safe Operation Area
100
Ta = 25°C, 1shot pulse
When using the FR4 board.
10 µs
10
PW
1
DC
= ₁₀
operation
ms
0.1
0.01 Operation in this area
is limited by R_DS(on)
0.001
0.01
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
16
12
8
4
Tc = 75°C
25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
4.5 V
V_GS = 10 V
10
Pulse Test
1
0.1
1
10
100
Drain Current I_D (A)