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HAT2268C_15 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching | |||
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HAT2268C
Electrical Characteristics
Item
Symbol Min
Drain to Source breakdown voltage
V(BR)DSS
30
Gate to Source breakdown voltage
V(BR)GSS
+20
â10
Gate to Source leak current
IGSS
â
Drain to Source leak current
IDSS
â
Gate to Source cutoff voltage
VGS(off)
1.0
Drain to Source on state resistance
RDS(on)
â
RDS(on)
â
Forward transfer admittance
|yfs|
5.5
Input capacitance
Ciss
â
Output capacitance
Coss
â
Reverse transfer capacitance
Crss
â
Turn - on delay time
td(on)
â
Rise time
tr
â
Turn - off delay time
td(off)
â
Fall time
tf
â
Total Gate charge
Qg
â
Gate to Source charge
Qgs
â
Gate to Drain charge
Qgd
â
Body - Drain diode forward voltage
VDF
â
Notes: 3. Pulse test
Typ
â
â
â
â
27
37
8.5
440
110
45
15
50
45
7
8
1.5
1.3
0.85
Max
â
±10
1
2.0
34
54
â
â
â
â
â
â
â
â
â
â
â
1.15
(Ta = 25°C)
Unit
Test conditions
V
ID = 10 mA, VGS = 0
IG = ±10 µA, VDS = 0
µA VGS = +16 / -8 V, VDS = 0
µA VDS = 30 V, VGS = 0
V
VDS = 10 V, ID = 1 mA
m⦠ID = 2 A, VGS = 10 VNote3
m⦠ID = 2 A, VGS = 4.5 VNote3
S
ID = 2 A, VDS = 10 V Note3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 2 A, VGS = 10 V,
ns VDD = 10 V, RL = 5 ⦠,
ns Rg = 4.7 â¦
ns
nC VDD = 10 V, VGS = 10 V
nC ID = 4 A
nC
V
IF = 4 A, VGS = 0 Note3
Rev.2.00 Feb 28, 2006 page 2 of 6
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