HAT2244WP Datasheet, PDF (5/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2244WP
Reverse Drain Current vs.
Source to Drain Voltage
50
40
30
10 V
V_GS = 0 V, –5 V
20
10
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SDF (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
100
I_AP = 25 A
80
V_DD = 50 V
duty < 0.1 %
Rg ≥ 50 Ω
60
40
20
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1shot
pulse
0.001
0.0001
10 µ
100 µ
Tc = 25°C
θch - c(t) = γs (t) • θch - c
θch - c = 5°C/ W, Tc = 25°C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
REJ03G1549-0400 Rev.4.00 Jun 13, 2007
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