HAT2244WP Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2244WP
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
3.1 V
10 V
40
2.9 V
30
20
2.7 V
10
V_GS = 2.5 V
Pulse Test
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
250
Pulse Test
200
150
I_D = 10 A
100
5A
50
2A
0
5
10
15
20
Gate to Source Voltage V_GS (V)
REJ03G1549-0400 Rev.4.00 Jun 13, 2007
Page 3 of 7
Maximum Safe Operation Area
1000
10 µs
100
1 _ms ¹⁰⁰ _µs
10
Operation in
1
this area is
limited by R_DS(on)
DC Operation
0.1
Tc=25°C
PW =
10 ms
Ta = 25°C
0.01 ^{1 shot Pulse}
0.1 0.3 1 3 10 30 100 300 1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20
Tc = 75°C
25°C
10
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
V_GS = 4.5 V
10
10 V
5
2
1
1
10
100
Drain Current I_D (A)