HAT2201WP Datasheet, PDF (5/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2201WP
Reverse Drain Current vs.
Source to Drain Voltage
20
10 V
16
V_GS = 0 V, –5 V
12
8
4
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SDF (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
50
I_AP = 15 A
40
V_DD = 50 V
duty < 0.1 %
Rg ≥ 50 Ω
30
20
10
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 _0.1
0.05
0.03
0.01
0.02
0.01
1shot
pulse
10 µ
100 µ
θch - c(t) = γs (t) • θch - c
θch - c = 8.33°C/ W, Tc = 25°C
P_DM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
REJ03G1679-0300 Rev.3.00 May 27, 2008
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