HAT2201WP Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2201WP
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
20
10 V
7V
16
6.2 V
12
5.8 V
8
4
V_GS = 5.5 V
Pulse Test
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
500
Pulse Test
400
300
200
I_D = 5 A
100
2A
1A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
REJ03G1679-0300 Rev.3.00 May 27, 2008
Page 3 of 7
Maximum Safe Operation Area
100
10 µs
10
1
Operation in
this area is
0.1 ^{limited by R}DS(on)
DC Operation
0.01
Tc = 25°C
100 µs
1 ms
PW =
10 ms
Ta = 25°C
0.001 ^{1 shot Pulse}
0.1 0.3 1 3
10 30 100 300 1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
16
12
Tc = 75°C
8
25°C
4
–25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
V_GS = 8 V
10 V
20
10
1
10
100
Drain Current I_D (A)