HAT2200R_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2200R
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
20
5.8 V
10 V
16
6V
12
5.6 V
8
V_GS = 5.4 V
4
Pulse Test
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
250
Pulse Test
200
150
I_D = 5 A
100
50
2A
1A
0
5
10
15
20
Gate to Source Voltage V_GS (V)
Maximum Safe Operation Area
100
10 µs
10
1
Operation in
this area is
0.1 ^{limited by R}DS(on)
100 µs
1 ms
PW =
10 ms
0.01
DC Operation
(PW £ 10 s)^{Note 5}
Ta = 25°C
0.001 ^{1 shot Pulse}
0.1 0.3 1 3
10 30 100 300 1000
Drain to Source Voltage V_DS (V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
16
12
Tc = 75°C
8
25°C
4
–25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
V_GS = 8 V
20
10 V
10
5
2
1
1
10
100
Drain Current I_D (A)
Rev.2.00, Apr.05.2004, page 3 of 7