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HAT2200R_15 Datasheet, PDF (4/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching
HAT2200R
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
100
Gate to source voltage
VGSS
±20
Drain current
Drain peak current
ID
8
ID(pulse)Note1
64
Body-drain diode reverse drain current
IDR
8
Avalanche current
IAP Note 2
8
Avalanche energy
EAR Note 2
6.4
Channel dissipation
Pch Note3
2.5
Channel to Ambient Thermal Impedance
θch-a Note3
50
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
(Ta = 25°C)
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
100
—
—
3.5
—
—
8
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Gate Resistance
Rg
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body–drain diode forward voltage
VDF
—
Body–drain diode reverse recovery time trr
—
Notes: 4. Pulse test
Typ
Max
Unit
—
—
V
—
± 0.1 µA
—
1
µA
—
5.0
V
22
28
mΩ
23
33
mΩ
14
—
S
2300 —
pF
280
—
pF
90
—
pF
1.3
—
Ω
32
—
nC
12
—
nC
8
—
nC
16
—
ns
4
—
ns
32
—
ns
4.5
—
ns
0.79 1.03 V
45
—
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 100 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 4 A, VGS = 10 V Note4
ID = 4 A, VGS = 8 V Note4
ID = 4 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 50 V
VGS = 10 V
ID = 8 A
VGS = 10 V, ID = 4 A
VDD ≅ 30 V
RL = 7.5 Ω
Rg = 4.7 Ω
IF = 8 A, VGS = 0 Note4
IF = 8 A, VGS = 0
diF/ dt = 100 A/ µs
Rev.2.00, Apr.05.2004, page 2 of 7