HAT2198R_16 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2198R
Reverse Drain Current vs.
Source to Drain Voltage
20
16
10 V
5V
12
V_GS = 0,-5 V
8
4
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
20
I_AP = 11 A
16
V_DD = 15 V
duty < 0.1 %
Rg > 50 Ω
12
8
4
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.1 ^0.2
0.1
0.01
0.001
0.05
0.02
0.01
1shot ^pulse
0.0001
10 µ 100 µ 1 m
θch - f(t) = γs (t) x θch - f
θch - f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (s)
100 1000 10000
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