HAT2198R_16 Datasheet, PDF (3/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2198R
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm), PW < 10 s
3.0
2.0
1.0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
20
10 V
Pulse Test
3V
2.8 V
16
12
2.6 V
8
4
V_GS = 2.4 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
300
Pulse Test
240
180
I_D = 20 A
120
10 A
60
5A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Maximum Safe Operation Area
500
100
10 _µs
10
1
DC _Ope^P_raWtio=n
Operation in
this area is
1
100
ms
µ_s
10 _ms
(PW _{< 1N0oste) 5}
0.1 ^{limited by RDS(on)}
Ta = 25°C
0.01 ^{1 shot Pulse}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
16
12
Tc = 75°C
8
4
25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
V_GS = 4.5 V
20
10
10 V
5
2
1
1
10
100
1000
Drain Current I_D (A)
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