HAT2140H Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2140H
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS 100
Gate to source breakdown voltage V_(BR)GSS ±20
Gate to source leak current
I
—
GSS
Zero gate voltage drain current
I
—
DSS
Gate to source cutoff voltage
V_GS(off)
2.0
Static drain to source on state
R_DS(on)
—
resistance
R_DS(on)
—
Forward transfer admittance
|y_fs|
27
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd —
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage V_DF
—
Body–drain diode reverse recovery t_rr
—
time
Notes: 4. Pulse test
Typ Max
—
—
—
—
—
±10
—
1
—
3.5
12.5 16.0
13.5 18.0
45
—
6500 —
480 —
210 —
105 —
20
—
22
—
25
—
24
—
100 —
12
—
0.83 1.08
55
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
Test Conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V = ±16 V, V = 0
GS
DS
V = 100 V, V = 0
DS
GS
V_DS = 10 V, I _D = 1 mA
I_D = 12.5 A, V_GS = 10 V ^Note4
I_D = 12.5 A, V_GS = 7 V ^Note4
I_D = 12.5 A, V_DS = 10 V ^Note4
V = 10 V
DS
V_GS = 0
f = 1 MHz
V_DD = 50 V
V_GS = 10 V
I_D = 25 A
V_GS = 10 V, I_D = 12.5 A
V_DD ≅ 30 V
R_L = 2.4 Ω
Rg = 4.7 Ω
IF = 25 A, V_GS = 0 ^Note4
IF = 25 A, V_GS = 0
diF/ dt = 100 A/ µs
Rev.2, Aug. 2002, page 3 of 5