HAT2140H Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2140H
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
V
DSS
V
GSS
I_D
I ^Note1
D(pulse)
I
DR
I Note 3
AP
E Note 3
AR
Pch ^Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc=25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Ratings
Unit
100
V
±20
V
25
A
100
A
25
A
25
A
62.5
mJ
30
W
150
°C
–55 to + 150
°C
Rev.2, Aug. 2002, page 2 of 5