HAT2108R Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2108R
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
V_(BR)DSS
V_(BR)GSS
I
GSS
I
DSS
V_GS(off)
R_DS(on)
R_DS(on)
|y_fs|
Ciss
28
± 12
—
—
0.4
—
—
17
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd —
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage V_DF
—
Body–drain diode reverse recovery t_rr
—
time
Notes: 4. Pulse test
Typ Max
—
—
—
—
—
±10
—
1
—
1.4
12
15
15
22
28
—
2200 —
400 —
240 —
16
—
5.2 —
4.8 —
30
—
35
—
70
—
25
—
0.85 1.11
40
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
Test Conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V = ±10 V, V = 0
GS
DS
V = 28 V, V = 0
DS
GS
V_DS = 10 V, I _D = 1 mA
I_D = 5.5 A, V_GS = 4 V ^Note4
I_D = 5.5 A, V_GS = 2.5 V ^Note4
I_D = 5.5 A, V_DS = 10 V ^Note4
V = 10 V
DS
V_GS = 0
f = 1 MHz
V_DD = 10 V
V_GS = 4 V
I_D = 11 A
V_GS = 4 A, I_D = 5.5 A
V_DD ≅ 10 V
R_L = 1.81 Ω
R_g = 4.7 Ω
IF = 11 A, V_GS = 0 ^Note4
IF = 11 A, V_GS = 0
diF/ dt = 50 A/µs
Rev.3, Aug. 2002, page 3 of 5