HAT2108R Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2108R
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
28
V
DSS
Gate to source voltage
V
±12
V
GSS
Drain current
I_D
11
A
Drain peak current
I Note1
D(pulse)
88
A
Body–drain diode reverse drain current I
11
A
DR
Channel dissipation
Pch ^Note2
2
W
Channel dissipation
Pch ^Note3
3
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Rev.3, Aug. 2002, page 2 of 5