HAT2057RA Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2057RA
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol Min
V_(BR)DSS
I_GSS
I_DSS
V_GS(off)
R_DS(on)
R_DS(on)
|y_fs|
Ciss
20
—
—
0.15
—
—
8
—
Coss —
Crss —
t_d(on)
—
t_r
—
t_d(off)
—
t_f
—
V_DF
—
t_rr
—
Typ Max
—
—
—
±0.2
—
10
—
0.90
26
33
40
60
13
—
1100 —
155 —
125 —
15
—
25
—
65
—
13
—
0.80 1.04
40
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I_D = 10 mA, V_GS = 0
V_GS = +6 V, -3V, V_DS = 0
V_DS = 10 V, V_GS = 0
V_DS = 10 V, I _D = 1mA
I_D = 2 A,V_GS = 4 V ^Note4
I_D = 2 A,V_GS = 1.5 V ^Note4
I_D = 2 A,V_DS = 10 V ^Note4
V_DS = 10 V
V_GS = 0
f = 1 MHz
V_GS = 4 V, I_D = 2 A
V_DD ≅ 10 V
R_g = 4.7 Ω
R_L = 5 Ω
IF = 4 , V_GS = 0 ^Note4
IF = 4A, V_GS = 0
diF/ dt =20 A/µs
Rev.0, Feb. 2003, page 3 of 5