HAT2057RA Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2057RA
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V_DSS
20
V
Gate to source voltage
V_GSS
+6,-3
V
Drain current
Drain peak current
I_D
4
A
I_{D(pulse)Note1}
32
A
Body–drain diode reverse drain current I_DR
4
A
Channel dissipation
Pch ^Note2
2
W
Channel dissipation
Pch ^Note3
3
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Rev.0, Feb. 2003, page 2 of 5