HAT2024R Datasheet, PDF (5/8 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2024R
Switching Characteristics
500
V_GS = 4 V, V_DD = 10 V
PW = 3 µs, duty ≤ 1 %
200
100
tr
tf
50
td(off)
20
td(on)
10
5
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
D=1
1
0.5
0.2
0.1 _0.1
0.05
0.02
0.01 _0.01
0.001
1shot ^pulse
θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
P_DM
D = ^PW
T
PW
T
0.0001
10 µ 100 µ 1 m
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
D=1
1
0.5
0.2
0.1 _0.1
0.05
0.02
0.01 _0.01
0.001
1shot ^pulse
0.0001
10 µ 100 µ 1 m
θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
P_DM
D = ^PW
T
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Rev.5.00 Sep 07, 2005 page 5 of 7