HAT2024R Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2024R
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
0.12
0.08
V_GS = 4 V
2A
I_D = 5 A
1A
0.04
1 A, 2 A, 5 A
10 V
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
0.1 0.2
di / dt = 20 A / µs
V_GS = 0, Ta = 25°C
0.5 1 2
5 10
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
50
20
I_D = 5.5 A
40
16
30
V_DS
20
V_DD = 5 V
10 V
20 V
12
V_GS ⁸
10
V_DD = 20 V
4
10 V
0
0
2
5V
0
4
6
8
10
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
20
10
Tc = –25°C
5
25°C
2
75°C
1
0.5
0.2
0.1
0.2
V_DS = 10 V
Pulse Test
0.5 1 2
5 10 20
Drain Current I_D (A)
1000
500
200
100
50
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
Crss
20
V_GS = 0
f = 1 MHz
10
0
10 20
30 40
50
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage
20
16
V_GS = 5 V
12
0, –5 V
8
4
Pulse Test
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Rev.5.00 Sep 07, 2005 page 4 of 7