HAT1024R_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1024R
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3.0
2.0
1.0
1 _{Drive Operation}
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–20
–10 V –8 V ^{–6 V}
Pulse Test
–16
–5 V
–12
–4.5 V
–8
–4 V
–3.5 V
–4
–3 V
VGS = –2.5 V
0
0
–2 –4 –6 –8 –10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.5
Pulse Test
–0.4
–0.3
I_D = –2 A
–0.2
–1 A
–0.1
–0.5 A
0
0
–2 –4 –6 –8 –10
Gate to Source Voltage V_GS (V)
Rev.9.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
–100
–30
–10
–3
–1
–0.3
–0.1
10 µs
OtlihmpisietearadretibaoyniDsRiCn_D^O_S^p₍^e_o^ra_n^t₎^ioPnW(P=W111_≤^00N_1m0m^o₀t^s_e^µss)₅^s
Ta = 25°C
–0.03 1 shot pulse
1 Drive Operation
–0.01
–0.1 –0.3 –1 –3
–10 –30
–100
Drain to Source Voltage V_DS (V)
Note 5:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
–20
Tc = –25°C
75°C
–16
25°C
–12
–8
–4
V_DS = –10 V
Pulse Test
0
0
–2 –4 –6 –8 –10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
2
Pulse Test
1
0.5
V_GS = –4 V
0.2
0.1
–10 V
0.05
0.02
–0.2 –0.5 –1 –2
–5 –10 –20
Drain Current I_D (A)