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FX30SMJ-3 Datasheet, PDF (5/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE | |||
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FX30SMJ-3
On-State Resistance vs.
Channel Temperature (Typical)
101
7 VGS = â10V
5 ID = â15A
Pulse Test
3
2
100
7
5
3
2
10â1
â50 0
50 100 150
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
1.4
VGS = 0V
ID = â1mA
1.2
1.0
0.8
0.6
0.4
â50 0
50 100 150
Channel Temperature Tch (°C)
Switching Time Measurement Circuit
Vin Monitor
RGEN
D.U.T.
Vout
Monitor
RL
RGS
VDD
Threshold Voltage vs.
Channel Temperature (Typical)
â4.0
â3.2
VDS = â10V
ID = â1mA
â2.4
â1.6
â0.8
0
â50 0
50 100 150
Channel Temperature Tch (°C)
Transient Thermal Impedance Characteristics
101
7
5
3
2
100 D = 1.0
7
5
0.5
3 0.2
2
0.1
PDM
10â1
tw
7
5
0.05
3
2
0.02
0.01
Single Pulse
T
D= tw
T
10â2
10â42 3
5 710â32 3
5 710â22 3
5 710â12 3
5 7 100 2 3
5 7 101 2 3
5 7 102
Pulse Width tw (s)
Switching Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
tf
Rev.2.00 Aug 07, 2006 page 5 of 6
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