FX30SMJ-3 Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FX30SMJ-3
Performance Curves
Power Dissipation Derating Curve
200
160
120
80
40
0
0
50
100
150
200
Case Temperature Tc (°C)
Output Characteristics (Typical)
–50
–40 ^{VGS = –10V}
Tc = 25°C
–6V ^{Pulse Test}
–5V
–4V
–3.5V
–30
–3V
–20
PD = 150W
–10
0
0
–2 –4 –6 –8 –10
Drain-Source Voltage V_DS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
–10
Tc = 25°C
Pulse Test
–8
–6
–4
ID = –45A
–30A
–2
–15A
0
0
–2 –4 –6 –8 –10
Gate-Source Voltage V_GS (V)
Rev.2.00 Aug 07, 2006 page 3 of 6
Maximum Safe Operating Area
–2
–10²
–7
–5
–3
–2
–10¹
–7
–5
–3
–2
100_µs
1ms
DC
–10⁰
–7
–5 _{Tc = 25°C}
–3 Single Pulse
–2
–2 –3 –5–7–10¹ –2 –3 –5–7–10² –2 –3 –5–7–10³ –2
Drain-Source Voltage V_DS (V)
Output Characteristics (Typical)
–20
VGS = –10V
–6V
–4V
–16
–3V
Tc = 25°C
Pulse Test
–12
–8
–2.5V
–4
0
0 –1.0 –2.0 –3.0 –4.0 –5.0
Drain-Source Voltage V_DS (V)
On-State Resistance vs.
Drain Current (Typical)
200
Tc = 25°C
Pulse Test
160
120
VGS = –4V
80
–10V
40
0–10_{0 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102}
Drain Current I_D (A)