FS50KMJ-3 Datasheet, PDF (5/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FS50KMJ-3
On-State Resistance vs.
Channel Temperature (Typical)
10¹
7 ^{VGS = 10V}
5 ^{ID = 25A}
4 ^{Pulse Test}
3
2
10⁰
7
5
4
3
2
10^–1
–50 0
50 100 150
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
Channel Temperature Tch (°C)
Switching Time Measurement Circuit
Vin Monitor
R_GEN
D.U.T.
Vout
Monitor
R_L
R_GS
V_DD
Threshold Voltage vs.
Channel Temperature (Typical)
4.0
VDS = 10V
ID = 1mA
3.2
2.4
1.6
0.8
0
–50 0
50 100 150
Channel Temperature Tch (°C)
Transient Thermal Impedance Characteristics
10¹
7
5 D = 1.0
3
2 ^0.5
10⁰ 0.2
7
5 ^0.1
3 0.05
2 _0.02
10^–1
7
5
3
2
0.01
Single Pulse
PDM
tw
T
D= ^tw
T
10^–2
10^–42 3 5710^–32 3 5710^–22 3 5710^–12 3 5710⁰ 2 3 5710¹ 2 3 5710²
Pulse Width tw (s)
Switching Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
90%
tr
td(off)
tf
Rev.3.00 Nov 21, 2006 page 5 of 6