FS50KMJ-3 Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FS50KMJ-3
High-Speed Switching Use
Nch Power MOS FET
Features
• Drive voltage : 4 V
• V_DSS : 150 V
• r_{DS(ON) (max)} : 30 mΩ
• I_D : 50 A
• Integrated Fast Recovery Diode (TYP.) : 125 ns
• Viso : 2000 A
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
2
12 ₃
1
3
REJ03G1421-0300
Rev.3.00
Nov 21, 2006
1. Gate
2. Drain
3. Source
Applications
Motor control, Lamp control, Solenoid control, DC-DC converters, etc.
Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Mass
Symbol
V_DSS
V_GSS
I_D
I_DM
I_DA
I_S
I_SM
P_D
Tch
Tstg
Viso
—
Ratings
150
±20
50
200
50
50
200
35
– 55 to +150
– 55 to +150
2000
2.0
(Tc = 25°C)
Unit
Conditions
V
V_GS = 0 V
V
V_DS = 0 V
A
A
A
L = 100 µH
A
A
W
°C
°C
V
AC for 1 minute,
Terminal to case
g
Typical value
Rev.3.00 Nov 21, 2006 page 1 of 6