FS30AS-06 Datasheet, PDF (5/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FS30AS-06
On-State Resistance vs.
Channel Temperature (Typical)
10¹
7 ^{VGS = 10V}
5
4
ID = 15A
Pulse Test
3
2
10⁰
7
5
4
3
2
10^–1
–50 0
50 100 150
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
Channel Temperature Tch (°C)
Switching Time Measurement Circuit
Vin Monitor
R_GEN
D.U.T.
Vout
Monitor
R_L
R_GS
V_DD
Threshold Voltage vs.
Channel Temperature (Typical)
5.0
VDS = 10V
I_D = 1mA
4.0
3.0
2.0
1.0
0
–50 0
50 100 150
Channel Temperature Tch (°C)
Transient Thermal Impedance Characteristics
10¹
7
5 D = 1.0
3
2
0.5
10^{0 0.2}
7 ^0.1
5
3
2
10^–1
7
5
3
2
0.05
0.02
0.01
Single Pulse
PDM
tw
T
D= ^tw
T
10^–2_{10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102}
Pulse Width tw (s)
Switching Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
90%
tr
td(off)
tf
Rev.2.00 Aug 07, 2006 page 5 of 6