FS30AS-06 Datasheet, PDF (4/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FS30AS-06
Transfer Characteristics (Typical)
100
Tc = 25°C
VDS = 10V
80
Pulse Test
60
40
20
0
0
4
8
12 16 20
Gate-Source Voltage V_GS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
10⁴
7
5
3
2
Ciss
10³
7
5
3
Coss
2
Crss
10²
7
5
3
2
Tch = 25°C
f = 1MHz
V_GS = 0V
101¹ _{0–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102}
Drain-Source Voltage V_DS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
20
Tch = 25°C
ID = 30A
16
VDS = 10V
12
20V
8
40V
4
0
0
10 20 30 40 50
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current (Typical)
10²
7 ^{VDS = 10V}
5 ^{Pulse Test}
4
3
2
Tc = 25°C
10¹
75°C
7
125°C
5
4
3
2
10⁰_{100 2 3 4 5 7 101 2 3 4 5 7 102}
Drain Current I_D (A)
Switching Characteristics (Typical)
10³
7
Tch = 25°C
5
4
VDD = 30V
VGS = 10V
3
RGEN = RGS = 50Ω
2
10² _td(off)
7
5 tf
4
3
td(on)
2
tr
10¹_{100 2 3 4 5 7 101}
2 3 4 5 7 10²
Drain Current I_D (A)
Source-Drain Diode Forward
Characteristics (Typical)
50
VGS = 0V
Pulse Test
40
30
Tc = 125°C
20
10
75°C
25°C
0
0
0.4 0.8 1.2 1.6 2.0
Source-Drain Voltage V_SD (V)
Rev.2.00 Aug 07, 2006 page 4 of 6