CT90AM-18_15 Datasheet, PDF (5/5 Pages) Renesas Technology Corp – INSULATED GATE BIPOLAR TRANSISTOR

MITSUBISHI Nch IGBT
CT90AM-18
INSULATED GATE BIPOLAR TRANSISTOR
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Parameter
Test conditions
ICES
IGES
VGE (th)
VCE (sat)
Cies
Coes
Cres
td (on)
tr
td (off)
tf
Etail
Itail
VEC
trr
Rth (ch-c)
Rth (ch-c)
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Tail loss
Tail current
Emitter-collector voltage
Diode reverse recovery time
Thermal resistance
Thermal resistance
VCE = 900V, VGE = 0V
VGE = ±20V, VCE = 0V
VCE = 10V, IC = 6mA
IC = 60A, VGE = 15V
VCE = 25V, VGE = 0V, f = 1MHz
VCC = 300V, IC = 60A, VGE = 15V, RG = 0Ω
ICP = 60A, Tj = 125°C, dv/dt = 200V/µs
IE = 60A, VGE = 0V
IE = 60A, dis/dt = –20A/µs
Junction to case
Junction to case
Limits
Unit
Min.
Typ.
Max.
—
—
1.0
mA
—
—
±0.5 µA
2.0
4.0
6.0
V
—
1.55 1.95
V
—
11000
—
pF
—
180
—
pF
—
125
—
pF
—
0.05
—
µs
—
0.10
—
µs
—
0.20
—
µs
—
0.30
—
µs
—
0.6
1.0 mJ/pls
—
6
12
A
—
—
3.0
V
—
0.5
2.0
µs
—
—
0.5 °C/W
—
—
4.0 °C/W
Sep. 2000