CT90AM-18_15 Datasheet, PDF (4/5 Pages) Renesas Technology Corp – INSULATED GATE BIPOLAR TRANSISTOR

CT90AM-18
MITMSIUTBSIUSBHIISNHcI hNIcGhBIGT BT
CT90CATM90-A1M8-18
INSIUNLSAUTLEADTEGDATGEATBEIPBOILPAORLATR ATNRSAINSSTIOSRTOR
OUTLINE DRAWING
20MAX.
Dimensions in mm
5
2
φ3.2

2
1
ŒŽ
5.45 5.45
0.5
3
q VCES ............................................................................... 900V
q IC .........................................................................................60A
4.0

q Simple drive
q Integrated Fast-recovery diode
q Small tail loss
ΠGATE
Œ
 COLLECTOR
Ž EMITTER
 COLLECTOR
q Low VCE Saturation Voltage
Ž
TO-3PL
APPLICATION
Microwave oven, Electoromagnetic cooking devices, Rice-cookers
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VCES
VGES
VGEM
IC
ICM
IE
PC
Tj
Tstg
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current
Collector current (Pulsed)
Emitter current
Maximum power dissipation
Junction temperature
Storage temperature
VGE = 0V
Conditions
Ratings
900
±25
±30
60
120
40
250
–40 ~ +150
–40 ~ +150
Unit
V
V
V
A
A
A
W
°C
°C
Sep. 2000