2SK3081 Datasheet, PDF (5/7 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3081
Reverse Drain Current vs.
Source to Drain Voltage
100
80
10 V
5V
60
V_GS = 0, –5 V
40
20
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1
0.1
0.05
0.03
0.02
0.011shot
pulse
0.01
10 µ
100 µ
θ_{ch – c(t) =} γ _{s (t) •} θ _{ch – c}
θ_{ch – c = 1.67°C/W, Tc = 25°C}
PDM
PW
T
D=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
10 V
50 Ω
V_DD
= 30 V
Vin
Vout
10%
10%
td(on)
90%
tr
90%
90%
td(off)
10%
tf
Rev.4.00 Sep 07, 2005 page 5 of 6