2SK3081 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3081
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 10 mΩ typ.
• 4 V gate drive devices.
• High speed switching
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
G
123
REJ03G1064-0400
(Previous: ADE-208-636A)
Rev.4.00
Sep 07,2005
D
1. Gate
2. Drain
(Flange)
3. Source
S
Rev.4.00 Sep 07, 2005 page 1 of 6